Q14.16Multiple correct
The breakdown in a reverse biased p–n junction diode is more likely to occur due to
- (a)large velocity of the minority charge carriers if the doping concentration is small.
- (b)large velocity of the minority charge carriers if the doping concentration is large.
- (c)strong electric field in a depletion region if the doping concentration is small.
- (d)strong electric field in the depletion region if the doping concentration is large.