Q14.36Multiple choice
Suppose a ‘n’-type wafer is created by doping Si crystal having 5 × 1028 atoms/m3 with 1ppm concentration of As. On the surface 200 ppm Boron is added to create ‘P’ region in this wafer. Considering n i = 1.5 × 1016 m–3,
- (i)Calculate the densities of the charge carriers in the n & p regions.
- (ii)Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased. Semiconductor Electronics: Materials Devices and Simple Circuits